| PART |
Description |
Maker |
| 2SD211809 |
Low VCE(sat) transistor (strobe flash)
|
Rohm
|
| 2SA1314 E000507 |
From old datasheet system
TRANSISTOR (STROBE FLASH, AUDIO POWER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| KSC2982 KSC2982ATF KSC2982BTF KSC2982CTF KSC2982DT |
NPN Epitaxial Silicon Transistor
Strobe Flash & Medium Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| GT5G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT20G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| 2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SA1431-Y |
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications
|
TOSHIBA
|
| 2SA1357 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| GT5G133 |
IGBT for strobe flash
|
TOSHIBA
|
